Photonically-triggered SiC-GaN and Superjunction based High-gain, High-temperature, and High-voltage Bipolar Power Transistor

基于光子触发 SiC-GaN 和超结的高增益、高温、高压双极功率晶体管

• 批准号: 0823983
• 负责人: Sudip Mazumder
• 金额: $ 30.76万
• 依托单位: University of Illinois at Chicago
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-08-15 至 2014-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0823983&HistoricalAwards=false
• 关键词: Photonically; triggered; SiC; GaN; Superjunction

Project objectives are 1) Realizing a high-gain, high-voltage and high-temperature monolithic SiC-GaN-OGBT (optically-gated bipolar transistor) triggered in a non-latched manner using a low-power short-wavelength photonic source; 2) Reducing photonic-triggering power by optimization of optical-absorption efficiency using a GaN-SiC heterojunction structure; 3) Reducing OGBT conduction drop using localized charge-compensation and conductivity modulation; 4) Experimental characterizations.Intellectual Merit:The emitter and base of the OGBT are made of GaN while the collector is made of SiC, thus achieving optical efficiency and retaining excellent breakdown voltage and temperature characteristics of SiC. OGBT eliminates oxide-reliability problem at high temperature and breakdown-voltage limitation in insulated-gate devices. N-type SiC substrate-based OGBT structure circumvents the problem of unavailability of P-type substrate required for N-channel SiC IGBTs. Optical triggering of OGBT eliminates negative-gate-bias referencing need for N-substrate SiC IGBT. Superjunction-based charge-compensation technique in SiC-GaN-OGBT yields high blocking voltage and low forward-conduction drop. Proposed work explores ohmic-contact issues for connecting N-GaN to P-SiC and hetero-epitaxial growth of GaN on SiC. OGBT has implications for high-power, high-temperature, and high-frequency power system with enhanced reliability due to optical isolation, EMI and parasitic-noise immunity, device stress mitigation, and synergistic integration of photonic and wide-bandgap device structures. Broader Impacts:Broad applications include fly-by-light, electric ship, electric/hybrid vehicles, telecommunication, spacecrafts, FACTs, pulsed power, and microwave power amplifiers. The results of the research will be integrated into 2 undergraduate/graduate courses. The project will support 1 Ph.D. student and aims to incorporate, per year, 4 senior-design and undergraduate-research students (including 2 under-represented and 1 honor-role student), and 1 middle-school student.

项目目标是 1) 实现使用低功率短波长光子源以非锁存方式触发的高增益、高电压和高温单片 SiC-GaN-OGBT（光栅双极晶体管）； 2）通过使用GaN-SiC异质结结构优化光吸收效率来降低光子触发功率； 3) 使用局部电荷补偿和电导率调制来降低 OGBT 导通压降； 4）实验表征。智力优点：OGBT的发射极和基极由GaN制成，集电极由SiC制成，从而实现光学效率并保留SiC优异的击穿电压和温度特性。 OGBT 消除了高温下氧化物可靠性问题和绝缘栅器件中的击穿电压限制。基于N型SiC衬底的OGBT结构避免了N沟道SiC IGBT所需的P型衬底的问题。 OGBT 的光触发消除了 N 衬底 SiC IGBT 的负栅极偏置参考需求。 SiC-GaN-OGBT 中基于超结的电荷补偿技术可产生高阻断电压和低正向传导压降。拟议的工作探讨了将 N-GaN 连接到 P-SiC 的欧姆接触问题以及 GaN 在 SiC 上的异质外延生长。由于光学隔离、EMI 和寄生噪声抗扰度、器件应力缓解以及光子和宽带隙器件结构的协同集成，OGBT 对高功率、高温和高频电源系统具有增强的可靠性。更广泛的影响：广泛的应用包括光传飞行、电动船舶、电动/混合动力车辆、电信、航天器、FACT、脉冲功率和微波功率放大器。研究结果将被整合到2个本科生/研究生课程中。该项目将支持 1 名博士。学生，目标是每年招收 4 名高级设计和本科生研究学生（包括 2 名弱势学生和 1 名荣誉学生）和 1 名中学生。