SGER: Fabrication of Innovative Cu/CNT Nanowires

SGER：创新铜/碳纳米管纳米线的制造

• 批准号: 0813741
• 负责人: Quanfang Chen
• 金额: --
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-02-01 至 2009-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0813741&HistoricalAwards=false
• 关键词: SGER; Fabrication; Innovative; Cu; CNT

CBET-0813741, ChenThis Small Grant for Exploratory Research (SGER) project is to develop an innovative Cu/CNT nanowire as potential future interconnects to overcome current technology barriers including electromigration and increased electrical resistivity. The continuous downscaling of line widths has caused two technology barriers associated with Cu interconnects including electromigration and largely increased resistivity. The increased resistivity not only increases the RC delay in the computation but also causes server electromigration as well as Joule heating related reliability concerns. Therefore, it is important to identify solutions to counter increased resistivity associated with nanoscale interconnects. The PI plans to combine copper's large electron density together with carbon nanotube's large mean free path (which is about 750 times greater than that of copper) to achieve potential ultrahigh conductive Cu/CNT nanowires. To do so, he will develop a fabrication process to realize: 1) good interfacial bonding (electrical contact) between CNT and Cu to ensure electron redistribution between CNT and Cu), 2) smooth surface to largely reduce electron-surface scattering. The PI's group has successfully verified that good interfacial bonding between Cu and CNT can be realized by electrochemical deposition in which negatively charged CNTs will attract positively charged Cu ions to form tightly bonded double layers. The PI plans to achieve smooth and uniform Cu coverage on CNT templates with a microchannel reactor by means of a laminar flow and diffusion controlled reaction.The objectives of the research proposal are: 1) to develop a typical microchannel system - a chemical fabrication on chip system for the fabrication of Cu/CNT nanowires; 2) to develop an electrochemical deposition process for the fabrication of Cu/CNT nanowires that Cu will be deposited uniformly onto CNT templates within the microchannel; 3) initiatively investigate fabricated Cu/CNT nanowires, in terms size and morphology (shape and surface condition) as well as electrical conductivity.Intellectual Merit: Cu/CNT nanowire is expected to produce ultrahigh electrical conductivity that is important to counter technology barriers associated with nanoscale interconnects including increased electrical resistivity and electromigration. The ultrahigh conductivity is ensured by the combination of large free electron density (from Cu) and large mean free path (from CNT). Electron redistribution between Cu and CNT will be realized by a tight binding fabrication of electrochemical deposition. Uniform and smooth surface of Cu/CNT nanowires will be fabricated in a microchannel chemical reactor in which lamina flow and diffusion controlled chemical reaction will take place. The success of this SGER project will put PI's group in a good position to compete for larger scale support.Broad Impacts: The success of this proposed research will make significant impacts on nanoscale interconnects as well as on chemical factory on chip (CFOC) for fabrication of nanomaterials. Nanoelectronics will benefit from the success of this work on ultrahigh conductive nanowires (Cu/CNT) and high anti electromigration potentials. These Cu/CNT nanowires are important as building blocks for assembling advanced interconnects for future ICs. In addition, these conductive Cu/CNT nanowires can also be used as advanced electrodes for biological and chemical applications. Educational impacts will be realized through student training and integration of the research with education.

CBET-0813741，Chinthis小型探索性研究（SGER）项目的小型赠款是为了克服当前技术障碍，包括电气移民和增加电阻率。线宽度的持续降尺度引起了两个与CU互连有关的技术障碍，包括电气移动和大量增加的电阻率。增加的电阻率不仅增加了计算的RC延迟，还会引起服务器电气移动以及相关的可靠性问题。因此，重要的是要确定解决与纳米级互连相关的增加电阻率的解决方案。 PI计划将铜的大电子密度与碳纳米管的大型自由路径（比铜的大约750倍）结合在一起，以实现潜在的超高导电CU/CNT纳米线。为此，他将开发一个制造过程以实现：1）CNT和CU之间的良好界面键（电触点），以确保CNT和CU之间的电子再分布），2）平滑表面以很大程度上减少电子表面散射。 PI的小组成功验证了CU和CNT之间的良好界面粘结可以通过电化学沉积来实现，在这些沉积中，负电荷的CNT会吸引带正电荷的Cu离子形成紧密粘合的双层。 PI计划通过层流和扩散控制反应在CNT模板上实现CN模板上的光滑和均匀的CU覆盖范围。研究建议的目标是：1）开发典型的微通道系统 - 在CU/CNT NANANOWIRES制造芯片系统上制造的化学制造。 2）开发一种用于制造Cu/Cnt纳米线的电化学沉积过程，该过程将均匀地沉积在微通道内的CNT模板上； 3）首先以大小和形态（形状和表面状况）以及电导率以及电气优点：CU/CNT纳米线预计产生超高的电导率，这对于与纳米级互连相关的相关技术很重要，包括增加电导率和电子电源，包括提高电气电阻和电子电位，预计将产生超高的电导率。通过大型游离电子密度（来自CU）和大平均自由路径（来自CNT）的组合来确保超高电导率。通过电化学沉积的紧密结合制造Cu和CNT之间的电子重新分布将实现。 CU/CNT纳米线的均匀和光滑表面将在微通道化学反应器中制造，其中将发生椎板流量和扩散控制化学反应。该SGER项目的成功将使PI的小组处于竞争更大规模支持的良好位置。BAROOD的影响：这项拟议的研究的成功将对纳米级互连以及芯片上的化学工厂（CFOC）产生重大影响（CFOC），以制造纳米材料。 纳米电子学将受益于这项在超高导电纳米线（CU/CNT）和高抗电迁移电位上的成功。这些CU/CNT纳米线非常重要，因为组装了未来IC的高级互连的基础。 此外，这些导电CU/CNT纳米线也可以用作生物和化学应用的晚期电极。教育影响将通过学生培训和研究与教育的整合来实现。