SGER: Fabrication of Innovative Cu/CNT Nanowires

SGER：创新铜/碳纳米管纳米线的制造

• 批准号: 0813741
• 负责人: Quanfang Chen
• 金额: --
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-02-01 至 2009-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0813741&HistoricalAwards=false
• 关键词: SGER; Fabrication; Innovative; Cu; CNT

CBET-0813741, ChenThis Small Grant for Exploratory Research (SGER) project is to develop an innovative Cu/CNT nanowire as potential future interconnects to overcome current technology barriers including electromigration and increased electrical resistivity. The continuous downscaling of line widths has caused two technology barriers associated with Cu interconnects including electromigration and largely increased resistivity. The increased resistivity not only increases the RC delay in the computation but also causes server electromigration as well as Joule heating related reliability concerns. Therefore, it is important to identify solutions to counter increased resistivity associated with nanoscale interconnects. The PI plans to combine copper's large electron density together with carbon nanotube's large mean free path (which is about 750 times greater than that of copper) to achieve potential ultrahigh conductive Cu/CNT nanowires. To do so, he will develop a fabrication process to realize: 1) good interfacial bonding (electrical contact) between CNT and Cu to ensure electron redistribution between CNT and Cu), 2) smooth surface to largely reduce electron-surface scattering. The PI's group has successfully verified that good interfacial bonding between Cu and CNT can be realized by electrochemical deposition in which negatively charged CNTs will attract positively charged Cu ions to form tightly bonded double layers. The PI plans to achieve smooth and uniform Cu coverage on CNT templates with a microchannel reactor by means of a laminar flow and diffusion controlled reaction.The objectives of the research proposal are: 1) to develop a typical microchannel system - a chemical fabrication on chip system for the fabrication of Cu/CNT nanowires; 2) to develop an electrochemical deposition process for the fabrication of Cu/CNT nanowires that Cu will be deposited uniformly onto CNT templates within the microchannel; 3) initiatively investigate fabricated Cu/CNT nanowires, in terms size and morphology (shape and surface condition) as well as electrical conductivity.Intellectual Merit: Cu/CNT nanowire is expected to produce ultrahigh electrical conductivity that is important to counter technology barriers associated with nanoscale interconnects including increased electrical resistivity and electromigration. The ultrahigh conductivity is ensured by the combination of large free electron density (from Cu) and large mean free path (from CNT). Electron redistribution between Cu and CNT will be realized by a tight binding fabrication of electrochemical deposition. Uniform and smooth surface of Cu/CNT nanowires will be fabricated in a microchannel chemical reactor in which lamina flow and diffusion controlled chemical reaction will take place. The success of this SGER project will put PI's group in a good position to compete for larger scale support.Broad Impacts: The success of this proposed research will make significant impacts on nanoscale interconnects as well as on chemical factory on chip (CFOC) for fabrication of nanomaterials. Nanoelectronics will benefit from the success of this work on ultrahigh conductive nanowires (Cu/CNT) and high anti electromigration potentials. These Cu/CNT nanowires are important as building blocks for assembling advanced interconnects for future ICs. In addition, these conductive Cu/CNT nanowires can also be used as advanced electrodes for biological and chemical applications. Educational impacts will be realized through student training and integration of the research with education.

CBET-0813741，陈这项小额探索性研究资助 (SGER) 项目旨在开发一种创新的 Cu/CNT 纳米线作为未来潜在的互连，以克服当前的技术障碍，包括电迁移和增加的电阻率。线宽的不断缩小导致了与铜互连相关的两个技术障碍，包括电迁移和电阻率大幅增加。电阻率的增加不仅增加了计算中的 RC 延迟，而且还会导致服务器电迁移以及焦耳热相关的可靠性问题。因此，找到解决方案来应对与纳米级互连相关的电阻率增加非常重要。该PI计划将铜的大电子密度与碳纳米管的大平均自由程（比铜大约750倍）结合起来，以实现潜在的超高导电Cu/CNT纳米线。为此，他将开发一种制造工艺来实现：1）CNT 和 Cu 之间良好的界面结合（电接触），以确保 CNT 和 Cu 之间的电子重新分布），2）光滑的表面，以大大减少电子表面散射。 PI团队已成功验证，通过电化学沉积可以实现Cu和CNT之间良好的界面结合，其中带负电的CNT会吸引带正电的Cu离子，形成紧密结合的双层。 PI 计划通过层流和扩散控制反应，利用微通道反应器在 CNT 模板上实现平滑、均匀的 Cu 覆盖。该研究计划的目标是：1）开发典型的微通道系统 - 芯片上的化学制造用于制造 Cu/CNT 纳米线的系统； 2）开发一种用于制造Cu/CNT纳米线的电化学沉积工艺，将Cu均匀沉积到微通道内的CNT模板上； 3) 主动研究制造的 Cu/CNT 纳米线的尺寸和形态（形状和表面条件）以及电导率。智力优点：Cu/CNT 纳米线有望产生超高的电导率，这对于克服与纳米级互连，包括增加电阻率和电迁移。大自由电子密度（来自铜）和大平均自由程（来自碳纳米管）的结合确保了超高电导率。 Cu 和 CNT 之间的电子重新分布将通过电化学沉积的紧密结合制造来实现。将在微通道化学反应器中制造表面均匀且光滑的Cu/CNT纳米线，在该反应器中发生层流和扩散控制的化学反应。该 SGER 项目的成功将使 PI 的团队处于有利地位，以争取更大规模的支持。 广泛影响：这项拟议研究的成功将对纳米级互连以及用于制造的片上化学工厂 (CFOC) 产生重大影响的纳米材料。 纳米电子学将受益于超高导电纳米线（Cu/CNT）和高抗电迁移电位方面的这项工作的成功。这些 Cu/CNT 纳米线作为未来 IC 组装先进互连的构建块非常重要。 此外，这些导电Cu/CNT纳米线还可用作生物和化学应用的先进电极。教育影响将通过学生培训以及研究与教育的结合来实现。