CAREER: Engineering and Parallel Fabrication of Single Electron Transistor Devices Using Carbon Nanotubes

职业：使用碳纳米管的单电子晶体管器件的工程和并行制造

• 批准号: 0748091
• 负责人: Saiful Khondaker
• 金额: $ 40万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-02-01 至 2014-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0748091&HistoricalAwards=false
• 关键词: CAREER; Engineering; Parallel; Fabrication; Single

Abstract: Khondaker The objective of this research is to develop a novel design engineering technique for parallel fabrication of controllable, scalable, and reproducible single electron transistor (SET) devices using carbon nanotubes (CNTs). The approach is to fabricate SET through (i) control positioning of individual CNT between source and drain electrodes via AC dielectrophoresis, (ii) engineering tunnel barrier formation by bending the CNT with a raised local aluminum oxide gate thereby forming a quantum dot, and (iii) controlling the size and operation of the dot by the same local gate. Intellectual Merit: Controlled fabrication and assembly of SET with different sizes from 100 nm to 20 nm will be demonstrated by integrating top down and bottom up techniques. Electronic transport properties will be studied. Room temperature operation and a novel ultra sensitive quantum sensor will be demonstrated. In contrast to the existing SET fabrication techniques, the proposed approach offers parallel fabrication of reproducible SET devices using one dimensional nanostructures. Broader Impact: The proposed research will have significant impact on nanoelectronics, information processing, and ultra sensitive chemical and biological sensing. Continued miniaturization of Si-Metal Oxide Semiconductor Field Effect Transistor will soon hit a major bottleneck. SET will become crucial for information and signal processing. For educational development and outreach, the PI proposes (i) development of a new graduate course titled, Nanoscale Physics and Nanoelectronics, (ii) modification of an undergraduate Nanophysics course, (iii) research training of minority and female students, high school students and teachers and (iv) community outreach through lectures, web based dossier and news letters.

摘要：Khondaker这项研究的目的是开发一种新型的设计工程技术，用于使用碳纳米管（CNTS）的可控制，可扩展和可再现的单电子晶体管（SET）设备进行并行制造。该方法是通过（i）通过（i）控制单个CNT在源和排水电极之间通过AC介电的定位，（ii）（ii）通过将CNT与CNT弯曲，并用较高的氧化铝门弯曲CNT，从而形成量子点，从而形成量子点，以及（iii）控制DOT的大小和操作。智力优点：通过整合自上而下和自下而上的技术，将证明具有从100 nm到20 nm的不同尺寸的受控制造和组装套件。将研究电子传输特性。将展示室温运行和新型的超灵敏量子传感器。与现有的制造技术相反，建议的方法使用一个维纳米结构提供了可再现设置设备的平行制造。更广泛的影响：拟议的研究将对纳米电子学，信息处理以及超灵敏的化学和生物传感产生重大影响。 Si-Metal氧化物半导体场效应晶体管的持续微型化将很快碰到一个主要的瓶颈。集合对于信息和信号处理至关重要。对于教育发展和外展，PI建议（i）开发新的研究生课程，标题为“纳米级物理学和纳米电子学”，（ii）修改本科纳米物理课程，（iii）对少数族裔和女学生，高中生，高中生和（iv）社区的研究培训。