Collaborative Research:Design, Modeling, Automation and Experimentation of Nanoscale Computing Fabric using Carbon Nanotubes

合作研究：使用碳纳米管的纳米级计算结构的设计、建模、自动化和实验

• 批准号: 0726791
• 负责人: Subhasish Mitra
• 金额: $ 62万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-10-01 至 2011-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0726791&HistoricalAwards=false
• 关键词: Collaborative; Research; Design; Modeling; Automation

Device scaling of silicon transistors has been the fundamental basis for the phenomenal success of the semiconductor industry.Such scaling is reaching a point where it is absolutely necessary to explore new devices as replacement for traditional silicon transistors.Otherwise, the progress of the semiconductor industry will be severely affected. Carbon Nanotube Field-Effect Transistors (CNFETs) are promising candidates as extensions to traditional Silicon transistors due to excellent device performance. While there have been significant accomplishments in scientific discovery of CNFETs in recent years at the single-device level, a major gap exists between such single-device-level results and the research required to harness the science into practical design technologies at the end of device scaling of silicon transistors. This research project targets to close this gap by developing necessary technologies required to make CNFETs practical candidates for replacing silicon transistors.The objective of this research is to design of robust nanoscale computing fabrics using Carbon Nanotube Field Effect Transistors (CNFETs) in the presence of inherent limitations and imperfections, and to experimentally demonstrate essential components of a fabric such as a processor. This research is motivated by the fact that CNFETs are promising candidates as extensions to Silicon CMOS, yet fundamental nanoscale challenges prevent successful implementations of efficient CNFET-based circuits and systems. This project includes an interdisciplinary research team to demonstrate robust CNFET-based computing fabrics, and also to educate future generations of engineers and the general public in the emerging field of nanoscale computing.

硅晶体管的器件微缩一直是半导体行业取得巨大成功的根本基础。这种微缩已经达到了绝对有必要探索新器件来替代传统硅晶体管的地步。否则，半导体行业的进步将会受到影响。受到严重影响。碳纳米管场效应晶体管 (CNFET) 因其出色的器件性能而成为传统硅晶体管扩展的有希望的候选者。尽管近年来在单器件水平上 CNFET 的科学发现取得了重大成就，但这种单器件水平的结果与将科学应用于器件末端的实际设计技术所需的研究之间存在重大差距硅晶体管的缩放。该研究项目的目标是通过开发必要的技术来缩小这一差距，使 CNFET 成为替代硅晶体管的实用候选者。这项研究的目标是在存在固有特性的情况下，使用碳纳米管场效应晶体管 (CNFET) 设计强大的纳米级计算结构。局限性和缺陷，并通过实验证明织物的基本组件，例如处理器。这项研究的动机是 CNFET 是硅 CMOS 扩展的有希望的候选者，但基本的纳米级挑战阻碍了基于 CNFET 的高效电路和系统的成功实现。该项目包括一个跨学科研究团队，旨在展示基于 CNFET 的强大计算结构，并教育下一代工程师和公众了解新兴的纳米级计算领域。