High-field studies of the band dispersion in novel semiconductor materials: Dilute nitride semiconductors and Ge/SiGe quantum wells

新型半导体材料中能带色散的高场研究：稀氮化物半导体和Ge/SiGe量子阱

• 批准号: 181399511
• 负责人: Dr. Oleksiy Drachenko
• 金额: --
• 依托单位: Helmholtz-Zentrum Dresden-Rossendorf (HZDR)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2011
• 资助国家: 德国
• 起止时间: 2010-12-31 至 2013-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/181399511?language=en
• 关键词: field; studies; band; dispersion; novel

In the first part, the project aims to systematically study the effect of nitrogen concentration on the effective mass of InAs1-xNx, GaAs1-xNx, and InSb1-xNx, which is of key importance for understanding the fundamentals of the conduction bandstructure modification due to the incorporation of nitrogen. The most direct experiment, high field cyclotron resonance (CR) absorption, will be performed on sets of samples with various nitrogen content under wide range of excitation wavelengths and temperatures. The CR measurements will be completed with other common indirect methods, including infrared 3 reflectivity and magneto-photoluminescence studies in order to understand the origin of the highly dispersed values of the effective mass published in the literature.In the second part, the attention is addressed to Ge/SiGe heterostructures, which are promising candidates to replace Si/SiGe systems in the next generation of high speed electronics, due to higher intrinsic carrier mobility in Germanium. The effect of biaxial strain on the hole effective mass and the valence band energy dispersion will be studied using high field CR under wide range of excitation wavelength.

在第一部分中，该项目旨在系统地研究氮浓度对INAS1-XNX，GAAS1-XNX和INSB1-XNX的有效质量的影响，这对于理解导致传导带修改的基础知识至关重要氮的掺入。最直接的实验，高场回旋共振（CR）吸收，将在具有各种氮含量的样品集中进行，在广泛的激发波长和温度下。 CR测量将通过其他常见的间接方法完成，包括红外3反射率和磁性发光研究，以了解文献中发表的有效质量的高度分散值的起源。到GE/SIGE异质结构，这是有望在下一代高速电子产品中替代SI/SIGE系统的有前途的候选人，这是由于锗中的固有载体迁移率较高。双轴应变对孔有效质量和价带能量分散体的影响将在较大的激发波长下使用高场CR进行研究。