Microscopic Studies of Schottky Barrier Nano-Contacts and Nano-Structured Metal/Semiconductor and Metal/Insulator Interfaces

肖特基势垒纳米接触和纳米结构金属/半导体和金属/绝缘体界面的微观研究

• 批准号: 0505165
• 负责人: Jonathan Pelz
• 金额: --
• 依托单位: Ohio State University Research Foundation -DO NOT USE
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-07-01 至 2009-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0505165&HistoricalAwards=false
• 关键词: Microscopic; Studies; Schottky; Barrier; Nano

This project addresses fundamental materials science details of Schottky barrier nano contacts and nano-structured metal/semiconductor and metal/insulator interfaces The approach incorporates three sets of experiments to image, quantify, and model nm-scale electronic properties of metal-semiconductor (MS) and metal-insulator (MI) Schottky-barrier (SB) interfaces, which have nm-scale dimensions or nm-scale internal structure. Local SB properties will be measured with nm-resolution ballistic electron emission microscopy (BEEM), and 3D electrostatic modeling will be used to compare and correlate nm-scale SB properties with the total device electrical response. The first set of experiments will study SB nanocontacts where the semiconductor dimension is systematically varied down to ~ 1 nm, to probe how small-size effects (e.g. quantum-confinement and "environmental pinning") affect carrier injection into semiconductor nanostructures. A structure will be used consisting of a SB made on the cleaved face of a GaAs/AlGaAs heterostructure containing quantum wells (QWs) of different, precisely known width. These samples will also be used as nm-sized "apertures" for quantitative study of lateral hot-electron scattering and relaxation in metal films, including scattering processes within and between individual metal grains. A second set of experiments will use different sample structures for nm-resolution SB studies while a strong gate-field is applied to the SB contact. The main objective is to image and quantify how strong geometry-induced fields at defects and device edges affect the local SB properties and carrier injection through the SB. These sample structures will also be used for Ambipolar BEEM measurements, where the electron barrier and the hole barrier can be quantified at the same location, for example close to a particular defect. The third set of experiments will study metal-oxide-silicon (MOS) structures, where the metal film is a laterally nanostructured mixture of metals with very different workfunctions. The goal is to image, quantify, and model how lateral nm-scale structure in the metal film affects the local and average barrier height at the metal/oxide interface, and hence the resulting local and average electric fields in the oxide film and at the critical oxide/Si interface. A related goal is to investigate metal bilayers and other nanostructured metal films as possible "tunable workfunction" metals for future devices (MOSFETs). %%% The project addresses fundamental research issues associated with materials having technological relevance in nanoelectronics. An important feature of the project is the strong emphasis on education, with emphasis on integration of research and education. This project will provide a highly interdisciplinary and collaborative environment for graduate and undergraduate student training. Students are expected to develop a broad knowledge and training base by combining equipment construction, semiconductor processing, advanced experiments with novel equipment, numerical modeling, and frequent interactions with collaborators. Undergraduate and underrepresented students will continue to be actively recruited. Additionally, the PI will continue active involvement with science outreach, particularly in K-6 with science demonstrations, student interactions, and teacher mentoring.

该项目介绍了Schottky屏障纳米​​触点的基本材料科学详细信息以及纳米结构的金属/半导体和金属/绝缘子界面该方法包含三组实验，用于图像，量化和模型NM尺度的金属 - 尺度电子性能（MS）（MS）（MS）以及具有NM尺寸的尺寸或NM尺度内部结构的金属 - 绝缘体（MI）Schottky栏（SB）界面。将使用NM分辨率弹道电子发射显微镜（BEEM）测量局部SB特性，将使用3D静电建模来比较和将NM级SB特性与总设备电响应进行比较和关联。第一组实验将研究SB纳米接触，其中半导体尺寸系统地变化至〜1 nm，以探测小尺寸效应（例如量子重点和“环境固定”）如何影响载体注射到半导体纳米结构中。将使用由在GAAS/ALGAA异质结构的裂片面上制成的SB组成的结构。这些样品还将用作NM大小的“光圈”，以定量研究金属膜中的侧向热电子散射和松弛，包括单个金属晶粒内和之间的散射过程。第二组实验将使用不同的样品结构进行NM分辨率SB研究，同时将强登机场应用于SB接触。主要目的是图像和量化缺陷和设备边缘处强大的几何诱导场如何影响局部SB特性和通过SB的载体注入。这些样品结构还将用于双极贝姆测量，其中电子屏障和孔屏障可以在同一位置进行量化，例如接近特定的缺陷。第三组实验将研究金属氧化物 - 硅硅（MOS）结构，其中金属膜是具有非常不同的工作配置的金属的侧向纳米结构化混合物。目标是对金属膜中的NM尺度结构进行图像，量化和模拟如何影响金属/氧化物界面处的局部和平均屏障高度，从而在氧化物膜中以及在氧化物膜中以及在氧化物膜中产生的局部和平均电场。关键的氧化物/SI接口。一个相关的目标是将未来设备（MOSFETS）的金属双层和其他纳米结构金属膜作为可能的“可调节功能”金属。 %%％解决了与具有技术相关性纳米电子技术相关的材料相关的基本研究问题。该项目的一个重要特征是强调教育，重点是研究和教育的整合。该项目将为研究生和本科生培训提供高度跨学科和协作的环境。希望学生通过将设备构建，半导体处理，高级实验与新型设备，数值建模以及与合作者的频繁互动相结合，从而发展广泛的知识和培训基础。本科生和代表性不足的学生将继续积极招募。此外，PI将继续积极参与科学宣传，特别是在K-6中进行科学示范，学生互动和教师指导。