SBIR Phase II: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors

SBIR 第二阶段：基于 III 族氮化物宽带隙半导体的微型显示器

• 批准号: 0450314
• 负责人: Zhaoyang Fan
• 金额: --
• 依托单位: III-N TECHNOLOGY, INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-02-01 至 2007-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0450314&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Microdisplays; Based

The goal of this SBIR Phase II project is to bring the demonstrated Gallium Nitride (GaN) microdisplay technology to industrial maturity and to final commercialization levels. The project's goal will be accomplished by further optimizing the microdisplay device structural design and fabrication process based on the demonstrative results obtained in Phase I. Based on high-efficiency semiconductor micro-light-emitting diode (microLED) array technology, the GaN microdisplay is the first of its kind based on semiconductor LEDs. Specifically, by the hybrid integration of GaN microLED arrays with Si CMOS driver circuits through flip-chip bonding, active matrix addressable GaN microdisplays will have a compact size and will be able to support more information content and movie display due to their high pixel filling factor, uniformity, luminance, and power efficiency. The unique intrinsic properties of GaN microLEDs - high brightness ( 10 microwatt optical output power for microLEDs of 18 micrometer in diameter), wide viewing angle (~ 160 degrees), fast response time ( 1 ns), and high thermal and vibrational resistance, make GaN microdisplays a perfect solution for environmentally demanding applications such as head-up displays (HUD) in modern vehicles and aircrafts, head-mounted displays (HMD) for firefighters and other rescue operatives, and hand-held mini-projectors for field applications.Microdisplays have a small size (typically less than 1 inch diagonal) with a resolution from low end to above XVGA format. They are magnified by optics to form enlarged virtual or projected images for viewing by a user. Microdisplays can be used in a variety of devices such as head-mounted displays, video headsets, camcorder viewfinders, projection TV, head-up displays, etc. and have many commercial applications. GaN microdisplay, with its superior performance over other microdisplay technologies, is especially suitable for environmentally demanding applications that require high brightness, high reliability, and wide operating temperature range. With a slight modification of the material composition, GaN microLED arrays developed here can vary the emitted wavelength from the green to the ultraviolet range, which is very suitable for fluorescence analysis used in new type chemical-biology agent detector array or DNA/protein microchips. The GaN microLED array also has the potential for applications such as optical links and parallel computing. Other applications also include spatially resolved optical studies of biological, medical, and health care systems. The research will also enrich the general knowledge of wide bandgap semiconductor micro- and nano-photonics.

SBIR 第二阶段项目的目标是将已展示的氮化镓 (GaN) 微显示技术推向工业成熟度并达到最终商业化水平。该项目的目标是在一期示范成果的基础上，进一步优化微显示器件的结构设计和制造工艺。基于高效半导体微发光二极管（microLED）阵列技术，GaN微显示是第一个基于半导体 LED 的同类产品。具体来说，通过倒装芯片接合将 GaN microLED 阵列与 Si CMOS 驱动电路混合集成，有源矩阵可寻址 GaN 微显示器将具有紧凑的尺寸，并且由于其高像素填充因子而能够支持更多信息内容和电影显示、均匀性、亮度和功率效率。 GaN microLED 独特的固有特性 - 高亮度（直径 18 微米的 microLED 的光输出功率为 10 微瓦）、宽视角（~ 160 度）、快速响应时间（1 ns）以及高耐热性和耐振动性，使得GaN 微显示器是对环境要求较高的应用的完美解决方案，例如现代车辆和飞机中的平视显示器 (HUD)、消防员和其他救援人员的头戴式显示器 (HMD)，以及用于现场应用的手持式微型投影仪。微型显示器尺寸较小（通常小于 1 英寸对角线），分辨率从低端到 XVGA 格式以上。它们被光学放大以形成放大的虚拟或投影图像以供用户观看。微显示器可用于多种设备，如头戴式显示器、视频耳机、摄像机取景器、投影电视、平视显示器等，并具有许多商业应用。 GaN微显示器凭借其优于其他微显示技术的性能，特别适合需要高亮度、高可靠性和宽工作温度范围的环境要求较高的应用。通过对材料成分进行轻微修改，这里开发的GaN microLED阵列可以将发射波长从绿光范围改变到紫外范围，非常适合新型化学生物制剂探测器阵列或DNA/蛋白质微芯片中使用的荧光分析。 GaN microLED 阵列还具有光链路和并行计算等应用的潜力。其他应用还包括生物、医学和保健系统的空间分辨光学研究。该研究还将丰富宽带隙半导体微纳米光子学的一般知识。