PECASE: A Novel Approach for Controlled Fabrication of Micro-Gated Carbon Nanotube Field Emitter Arrays and Their Electrical Property Characterizations

PECASE：微选通碳纳米管场发射体阵列的受控制造及其电性能表征的新方法

• 批准号: 0348277
• 负责人: Jun Jiao
• 金额: $ 40万
• 依托单位: Portland State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-06-01 至 2012-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0348277&HistoricalAwards=false
• 关键词: PECASE; Novel; Approach; Controlled; Fabrication

The high aspect ratio and small tip radius of curvature of carbon nanotubes (CNTs) make them especially suitable as sources for field emission. Recently, several reports have demonstrated that fabricating CNTs within micro-gated field emitter arrays (MG-FEAs) can reduce the required voltage and enable greater control over the emission current. The potential applications of gated CNT FEAs including flat panel displays, high frequency amplifiers, spacecraft propulsion systems, high voltage and high temperature electronics, portable x-ray sources, and multiple electron-beam lithography. The study of such triode-type CNT field emitters and emitter arrays, however, has been a less-publicized effort. The scarcity of reports on fabricating and characterizing micro-gated carbon nanotube field emitter arrays (MG-CNT-FEAs) is largely due to the complexity of making gated substrate arrays and the difficulty of controlling the growth of CNTs on the tops of substrate posts or on the bottoms of gated insulator-cell-arrays. Herein, we propose here a program of research that exploits a novel hybrid approach of using the focused ion beam (FIB) and chemical vapor deposition (CVD) to fabricate MG-CNT-FEAs with better control. This proposed research will permit, for the first time, a fully-dry-etching process for fabricating micro-array substrates. The proposed technique, if it is successfully developed, will not only eliminate tedious wet chemistry processes but also provide the flexibility to fabricate MG-CNT-FEAs with various configurations. The main objectives of the proposed research program are therefore to (1) develop MG-CNT-FEAs of various configurations using a combined FIB and CVD technique; (2) characterize the field emission behaviors of the fabricated MG-CNT-FEAs; (3) optimize the fabrication procedures to maximize the MG-CNT-FEAs performance; (4) improve the techniques for growing high quality carbon nanotubes; and (5) explore procedures for the large-scale manufacture of MG-CNT-FEAs while scaling down the size of their single components (unit cells). In addition, the program creates a unique opportunity for blending the educational experience of graduate, undergraduate, and selected high school students with state-of-the-art fabrication technology and cutting edge research. The results of this work will be disseminated through publications in refereed journals, conference presentations and will also be posted in the PI's world-wide-web home page.

碳纳米管（CNT）曲率的高纵横比和小尖端半径使它们特别适合作为现场发射的来源。最近，一些报告表明，在微门田发射极阵列（MG-FEAS）中制造CNT可以降低所需的电压，并能够更大的控制发射电流。封闭式CNT官员的潜在应用，包括平板显示器，高频放大器，航天器推进系统，高压和高温电子，便携式X射线源以及多个电子束光刻。但是，对这种三极管型CNT磁场发射器和发射极阵列的研究一直是一项不太广泛的努力。关于制造和表征微门控碳纳米管发射器阵列（MG-CNT-FEAS）的报道的稀缺很大程度上是由于制造封闭式基质阵列的复杂性以及控制CNT在基板柱上或在底部的底部或盖特的绝缘液阵列上的CNT增长的困难。本文中，我们在这里提出了一项研究计划，该计划利用了一种新型的混合方法，即使用聚焦离子束（FIB）和化学蒸气沉积（CVD）来制造具有更好控制的MG-CNT-FEAS。这项拟议的研究将首次允许制造微阵列底物的完全干燥的过程。该提出的技术（如果成功开发）不仅可以消除乏味的湿化学过程，还可以灵活地制造具有各种配置的MG-CNT-FEAS。因此，提出的研究计划的主要目标是（1）使用组合的FIB和CVD技术开发各种配置的MG-CNT-FEAS； （2）表征制造的MG-CNT-FEAS的现场发射行为； （3）优化制造程序以最大化MG-CNT-FEAS性能； （4）改善生长高质量碳纳米管的技术； （5）探索在缩小单个组件（单元）大小的同时，探索了大规模生产MG-CNT-FEAS的程序。此外，该计划为融合研究生，本科生和精选的高中学生的教育经验创造了独特的机会，并具有最先进的制造技术和尖端研究。这项工作的结果将通过卷发期刊，会议演讲中的出版物进行传播，还将发布在PI的全球范围内主页上。