PECASE: A Novel Approach for Controlled Fabrication of Micro-Gated Carbon Nanotube Field Emitter Arrays and Their Electrical Property Characterizations

PECASE：微选通碳纳米管场发射体阵列的受控制造及其电性能表征的新方法

• 批准号: 0348277
• 负责人: Jun Jiao
• 金额: $ 40万
• 依托单位: Portland State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-06-01 至 2012-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0348277&HistoricalAwards=false
• 关键词: PECASE; Novel; Approach; Controlled; Fabrication

The high aspect ratio and small tip radius of curvature of carbon nanotubes (CNTs) make them especially suitable as sources for field emission. Recently, several reports have demonstrated that fabricating CNTs within micro-gated field emitter arrays (MG-FEAs) can reduce the required voltage and enable greater control over the emission current. The potential applications of gated CNT FEAs including flat panel displays, high frequency amplifiers, spacecraft propulsion systems, high voltage and high temperature electronics, portable x-ray sources, and multiple electron-beam lithography. The study of such triode-type CNT field emitters and emitter arrays, however, has been a less-publicized effort. The scarcity of reports on fabricating and characterizing micro-gated carbon nanotube field emitter arrays (MG-CNT-FEAs) is largely due to the complexity of making gated substrate arrays and the difficulty of controlling the growth of CNTs on the tops of substrate posts or on the bottoms of gated insulator-cell-arrays. Herein, we propose here a program of research that exploits a novel hybrid approach of using the focused ion beam (FIB) and chemical vapor deposition (CVD) to fabricate MG-CNT-FEAs with better control. This proposed research will permit, for the first time, a fully-dry-etching process for fabricating micro-array substrates. The proposed technique, if it is successfully developed, will not only eliminate tedious wet chemistry processes but also provide the flexibility to fabricate MG-CNT-FEAs with various configurations. The main objectives of the proposed research program are therefore to (1) develop MG-CNT-FEAs of various configurations using a combined FIB and CVD technique; (2) characterize the field emission behaviors of the fabricated MG-CNT-FEAs; (3) optimize the fabrication procedures to maximize the MG-CNT-FEAs performance; (4) improve the techniques for growing high quality carbon nanotubes; and (5) explore procedures for the large-scale manufacture of MG-CNT-FEAs while scaling down the size of their single components (unit cells). In addition, the program creates a unique opportunity for blending the educational experience of graduate, undergraduate, and selected high school students with state-of-the-art fabrication technology and cutting edge research. The results of this work will be disseminated through publications in refereed journals, conference presentations and will also be posted in the PI's world-wide-web home page.

碳纳米管（CNT）的高长径比和小尖端曲率半径使其特别适合作为场发射源。最近，一些报告表明，在微选通场发射器阵列 (MG-FEA) 内制造 CNT 可以降低所需的电压，并能够更好地控制发射电流。门控 CNT FEA 的潜在应用包括平板显示器、高频放大器、航天器推进系统、高压和高温电子设备、便携式 X 射线源和多电子束光刻。然而，对这种三极管型碳纳米管场发射器和发射器阵列的研究却鲜为人知。关于微门控碳纳米管场发射器阵列（MG-CNT-FEA）的制造和表征的报道的稀缺很大程度上是由于门控基板阵列的制作复杂性以及控制基板柱或顶部碳纳米管的生长的难度。在门控绝缘体单元阵列的底部。在此，我们提出了一项研究计划，该计划利用一种新颖的混合方法，即使用聚焦离子束 (FIB) 和化学气相沉积 (CVD) 来制造具有更好控制的 MG-CNT-FEA。这项拟议的研究将首次允许采用完全干法蚀刻工艺来制造微阵列基板。所提出的技术如果开发成功，不仅将消除繁琐的湿化学工艺，而且还可以灵活地制造具有各种配置的 MG-CNT-FEA。因此，拟议研究计划的主要目标是（1）使用 FIB 和 CVD 组合技术开发各种配置的 MG-CNT-FEA； (2) 表征所制造的 MG-CNT-FEA 的场发射行为； (3) 优化制造程序以最大化 MG-CNT-FEA 性能； (4)改进高质量碳纳米管生长技术； (5) 探索大规模制造 MG-CNT-FEA 的程序，同时缩小其单个组件（单元）的尺寸。此外，该项目还创造了一个独特的机会，将研究生、本科生和精选高中生的教育经验与最先进的制造技术和前沿研究相结合。这项工作的结果将通过参考期刊上的出版物、会议演示文稿进行传播，并且还将发布在 PI 的万维网主页上。