SBIR Phase I: Electro-Optic Sensor for Real-Time Defect Detection During Integrated Circuits (IC) and Microelectromechanical Systems (MEMS) Wafer Growth

SBIR 第一阶段：用于集成电路 (IC) 和微机电系统 (MEMS) 晶圆生长过程中实时缺陷检测的光电传感器

• 批准号: 0318517
• 负责人: Araz Yacoubian
• 金额: $ 10万
• 依托单位: Ler Technologies
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2004-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0318517&HistoricalAwards=false
• 关键词: SBIR; Phase; Electro; Optic; Sensor

This Small Business Innovation Research (SBIR) Phase I project is to develop a novel methodology for real time (in-situ) non-destructive detection of defects and damage at micron and sub-micron length scales. The objectives of this research are (a) to demonstrate detection of defects in semi-conductor thin-films and micro-structured materials by generating and detecting high-frequency elastic waves, and analyzing the acoustic response; and (b) to design a damage detection technique for real time inspection of integrated circuits (IC) and microelectromechanical systems (MEMS) during wafer growth. The method utilizes a high-speed polymeric electro-optic (EO) integrated sensor to analyze the acoustic response due to a pulsed laser induced elastic waves. The sensor is an interferometer that has an EO element built in, which is used to down convert gigahertz range (GHz) acoustic response signals to lower-frequency (kHz to MHz) detectable signal by heterodyning. The commercial application of this work is real time (in-situ) defect detection during IC and MEMS wafer growth. Current wafer technology utilizes high-resolution lithography and expensive, time-consuming processing steps. Early stage detection of defects using the proposed method will result in high-yield and low-cost wafer manufacturing.

这项小型企业创新研究（SBIR）I期项目是为实时（原位）对微米和亚微米长度尺度下的缺陷和损害的非破坏性检测开发一种新颖的方法。 这项研究的目的是（a）通过产生和检测高频弹性波，并分析声音响应，证明半导体薄膜和微结构材料中缺陷的检测； （b）在晶圆生长过程中设计一种损伤检测技术，以实时检查综合电路（IC）和微电动系统（MEMS）。 该方法利用高速聚合电磁（EO）集成传感器来分析由于脉冲激光诱导的弹性波而引起的声音响应。 该传感器是一个内置的EO元件的干涉仪，该元件用于将Gigahertz范围（GHz）声音响应信号转换为低频（KHz）（kHz至MHz）可检测到的信号。 这项工作的商业应用是IC和MEMS晶圆增长期间的实时（原位）缺陷检测。 当前的晶圆技术利用高分辨率光刻和昂贵的，耗时的处理步骤。 使用所提出的方法对缺陷进行早期检测将导致高产和低成本的晶圆制造。