Optical Studies of High-field Electron and Hole Transport in Nitride-based Wide Bandgap Semiconductor Nanostructures

氮化物宽带隙半导体纳米结构中高场电子和空穴传输的光学研究

• 批准号: 0305147
• 负责人: Kong-Thon Tsen
• 金额: $ 15.65万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-15 至 2007-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0305147&HistoricalAwards=false
• 关键词: Optical; Studies; field; Electron; Hole

This project addresses high-field carrier transient transport in nitride-based wide bandgap semiconductor nanostructures. The approach is to conduct systematic studies of transient electron and hole transport properties such as velocity overshoot and phonon dynamics in nitride-based wide bandgap semiconductor nanostructures by using time-resolved, sub-picosecond Raman spectroscopy. Goals are to achieve greater understanding of fundamental phenomena to define optimal device operation conditions, and to provide the basis for the design of a new class of high performance electronic devices. %%% An important impact of the project is in education and human resource development through the integration of research and education. The proposed research program will enhance the PI's student mentorship activities and increase chances of attracting minority students pursuing advanced degrees at ASU. The proposed research program will further enhance the existing infrastructure of both nanostructured materials as well as wide bandgap semiconductors having advantages in computing and signal processing technologies. ***

该项目涉及基于氮化物的宽带半导体纳米结构中的高场载体瞬态运输。该方法是通过使用时间分辨的，亚比秒的拉曼光谱法对瞬时电子和孔传输特性进行系统研究，例如速度过冲和声子动力学。目标是要更深入地了解基本现象，以定义最佳的设备操作条件，并为设计一类新的高性能电子设备的设计提供基础。 该项目的一个重要影响是通过研究和教育的整合在教育和人力资源发展中。拟议的研究计划将增强PI的学生指导活动，并增加吸引在ASU攻读高级学位的少数学生的机会。拟议的研究计划将进一步增强纳米结构材料的现有基础设施以及在计算和信号处理技术方面具有优势的宽带隙半导体。 ***