GOALI/Spin Electronics: Development of ZnO Based Room Temperature Spintronics

GOALI/自旋电子学：ZnO基室温自旋电子学的发展

• 批准号: 0224166
• 负责人: Yicheng Lu
• 金额: $ 32.5万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-10-01 至 2006-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0224166&HistoricalAwards=false
• 关键词: GOALI; Spin; Electronics; Development; ZnO

0224166LuThis proposal was received in response to the Spin Electronics for the 21st Century Initiative, Program Solicitation NSF 02-036. The proposal focuses on the study and development of metalorganic chemical vapor deposition (MOCVD) -grown transition metal (TM) -doped ZnO as a diluted magnetic semiconductor (DMS) layer, and explore its application through industrial collaborators, as well as government labs. This material offers the possibility of highly integrated device architecture along with the ability to manipulate carrier spin as well as charge. Practical application requires that the material have a magnetic Curie temperature above room temperature. While theoretical studies have identified GaN and ZnO as the most promising DMS materials in this regard, the high solubility of TM ions in ZnO, as well as its wide band gap (transparent!) its multifunctionality, and relatively low growth temperature make ZnO an excellent choice of room temperature spintronics material. To achieve their goals, they will focus on: A systematic study to develop low-pressure MOCVD technology for growth of TM-doped ZnO films. The most promising doping species are V, Co, Ni, and Mn, and R-Al2O3 is an optimal substrate; A coordinated characterization program using both in-house and synchrotron radiation based spectroscopic, imaging, and diffractive techniques to characterize the chemical, electronic, structural and magnetic properties of the MOCVD-grown TM-doped ZnO films; and through the industrial collaboration integrate the ZnO spin aligner layers with GaN LEDs to form the spin-polarized injection LED operational at room temperature. The successful completion of the proposed research will have a significant impact on the scientific understanding and practical application of diluted magnetic semiconductor spintronics. It is anticipated that new phenomena related to spin-electronic, spin-magnetic, and spin-optical integration in wide band gap DMS materials will be discovered, leading to fundamentally new devices and applications.

0224166Lu此提案是为了响应 21 世纪自旋电子学计划 NSF 02-036 计划征集而收到的。 该提案重点研究和开发金属有机化学气相沉积 (MOCVD) 生长的过渡金属 (TM) 掺杂 ZnO 作为稀释磁性半导体 (DMS) 层，并通过工业合作者和政府实验室探索其应用。这种材料提供了高度集成的器件架构的可能性以及操纵载流子自旋和电荷的能力。 实际应用要求材料具有高于室温的磁性居里温度。 虽然理论研究已确定 GaN 和 ZnO 是这方面最有前途的 DMS 材料，但 TM 离子在 ZnO 中的高溶解度、宽带隙（透明！）、多功能性和相对较低的生长温度使 ZnO 成为优异的 DMS 材料。室温自旋电子学材料的选择。 为了实现他们的目标，他们将重点关注： 系统研究开发用于 TM 掺杂 ZnO 薄膜生长的低压 MOCVD 技术。 最有前途的掺杂种类是V、Co、Ni和Mn，R-Al2O3是最佳衬底；协调表征程序，使用基于内部和同步辐射的光谱、成像和衍射技术来表征 MOCVD 生长的 TM 掺杂 ZnO 薄膜的化学、电子、结构和磁性特性；并通过工业合作将 ZnO 自旋对准器层与 GaN LED 集成，形成可在室温下运行的自旋偏振注入 LED。该研究的成功完成将对稀磁半导体自旋电子学的科学理解和实际应用产生重大影响。 预计将发现与宽带隙 DMS 材料中的自旋电子、自旋磁和自旋光集成相关的新现象，从而产生全新的器件和应用。