SBIR Phase I: Development of Reduced Engineering Models for Prediction of Growth of Ternary III-V Semiconductor Materials Grown by Metal Organic Vapor Phase Epitaxy

SBIR 第一阶段：开发简化工程模型，用于预测金属有机气相外延生长的三元 III-V 半导体材料的生长

• 批准号: 0213917
• 负责人: Sandip Mazumder
• 金额: $ 10万
• 依托单位: CFD RESEARCH CORPORATION
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-01 至 2002-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0213917&HistoricalAwards=false
• 关键词: SBIR; Phase; Development; Reduced; Engineering

This Small Business Innovation Research (SBIR) Phase I study is aimed toward development of an efficient procedure for predicting growth of ternary III-V semiconductor materials grown by Metal Organic Vapor Phase Epitaxy (MOVPE). These techniques are now used extensively in the semiconductor industry to model growth of materials on substrates by chemical vapor deposition. The success of such modeling depends largely on the complexity of the gas phase and surface reaction mechanisms used to predict the growth process. While multi-step finite-rate reaction mechanisms involving approximately ten to twenty species are adequate for modeling growth of binary alloys, accurate modeling of ternary alloy growth necessitates many more reactions and species. This renders the calculations for such scenarios extremely expensive and prohibitive. This technology can improve a wide variety of electronic and opto-electronic are devices. Optimization and characterization of their growth is crucial to the success of the opto-electronic and semiconductor industry. While commercial these codes have been used with great success for modeling growth of pure and binary semiconductor materials, their success has been limited (if not non-existent) for ternary materials due to the lack of knowledge of the chemistry and the extreme computational efforts required o perform such calculations.

这项小型企业创新研究（SBIR）I阶段研究旨在开发有效的程序，以预测由金属有机蒸气相结合（MOVPE）生长的三元III-V半导体材料的增长。现在，这些技术在半导体行业中广泛使用，以通过化学蒸气沉积对底物的材料增长进行建模。这种建模的成功在很大程度上取决于用于预测生长过程的气相和表面反应机制的复杂性。尽管涉及大约十至20种物种的多步有限速率反应机制足以建模二元合金的生长，但三元合金生长的准确建模需要更多的反应和物种。这为这种情况非常昂贵且过于刺激。这项技术可以改善各种电子和光电的设备。其增长的优化和表征对于光电和半导体行业的成功至关重要。尽管这些代码的商业代码已成功地用于建模纯净和二进制半导体材料的增长，但由于缺乏化学的知识和所需的极端计算工作，它们的成功（如果不是不存在的话）是有限的（如果不是不存在的） o执行此类计算。