SGER:Novel Disk Architecture for Extremely High Magnetic Storage Densities

SGER：用于极高磁存储密度的新型磁盘架构

• 批准号: 0205869
• 负责人: Jeffrey Streator
• 金额: $ 9.17万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-03-01 至 2004-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0205869&HistoricalAwards=false
• 关键词: SGER; Novel; Disk; Architecture; Extremely

SGER: NOVEL DISK ARCHITECTURE FOR EXTREMELY HIGH MAGNETIC STORAGE DENSITIESJeffrey L. Streator, Georgia Institute of TechnologyYip-Wah Chung, Northwestern UniversityABSTRACTTo meet the demand for ever-increasing density of information storage, new recording technologies must be developed. For example, a stated goal of the National Storage Industry Consortium is to achieve a storage density of 1 terabyte per square inch (1 Tb/in2) by 2005. In this vein, researchers at Georgia Tech and Northwestern University propose a collaborative effort to investigate the viability of a new magnetic domain architecture for achieving ultrahigh recording densities. The novel architecture consists of a patterned perpendicular recording media with discrete, electrically insulated magnetic domains that are slightly recessed below the disk surface. The discrete nature of the domains prevents the thermal instabilities associated with continuous media and the superparamagnetic limit. Having the domains slightly recessed 1 to 2 nanometers--as opposed to protruding 10-12 nanometers as with conventional patterned media concepts--is expected to provide much better flying characteristics through reduction of spacing modulation. In addition, by having the domains electrically insulated, potential corrosion problems, which become increasingly likely with decreasing overcoat thickness, are virtually eliminated. Fabrication of the patterned media will be accomplished in two ways: (1) via nanosphere lithography and (2) via a focused ion beam (FIB) technique. The nanosphere lithography will employ an array of monodispersed nanospheres as a lithographic mask, while the FIB method will involve direct high-resolution mask-less etching. Characterization and evaluation in the proposed study will include topographical measurements, flyability studies and corrosion monitoring. In addition, the investigation will involve numerical simulation of slider flight as well as fabrication process modeling. Execution of this research plan will involve close collaboration between the two research groups. If successful, the study will provide a blueprint for developing a cost-effective and robust means of meeting the high-density storage demands of the information storage industry.

SGER：用于极高的磁性存储密度的新颖磁盘结构J.Effrey L. Streator，佐治亚州理工学院Yip-wah Chung，西北大学的Abstract，必须满足对信息存储的不断增长的需求，必须开发新的记录技术。 例如，国家存储行业财团的一个既定目标是到2005年达到每平方英寸（1 tb/in2）的存储密度。用于实现超高记录密度的新磁性域结构的生存能力。 这种新型构建结构由带有带模式的垂直记录介质组成，具有离散的电气绝缘磁性域，略微凹陷在磁盘表面以下。 域的离散性质阻止了与连续培养基和超级磁性极限相关的热不稳定性。 使域稍微凹陷1到2纳米（与传统图案介质概念一样伸出10-12纳米的反对，可以通过降低间距调制来提供更好的飞行特性。 另外，通过使域电隔离，潜在的腐蚀问题实际上消除了，由于大衣厚度的降低而变得越来越有可能。 图案介质的制造将通过两种方式完成：（1）通过纳米光刻和（2）通过聚焦离子束（FIB）技术。 纳米光刻将采用一系列单分散的纳米球作为光刻掩码，而FIB方法将涉及直接的高分辨率无掩模无蚀刻。 拟议的研究中的表征和评估将包括地形测量，苍蝇性研究和腐蚀监测。 此外，调查将涉及滑块飞行以及制造过程建模的数值模拟。 该研究计划的执行将涉及两个研究小组之间的密切合作。 如果成功，这项研究将为满足信息存储行业的高密度存储需求而开发一种蓝图。