FRG: Quantum Engineering of Metallic Nanostructures

FRG：金属纳米结构的量子工程

• 批准号: 0071893
• 负责人: Chih-Kang Shih
• 金额: $ 65万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-09-01 至 2003-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0071893&HistoricalAwards=false
• 关键词: FRG; Quantum; Engineering; Metallic; Nanostructures

This project addresses effects of quantum confinement on epitaxial growth of metal/semiconductor thin films and nanostructures. The approach is a combined theory/experiment collaborative activity among researchers at U. Tx/Austin and ORNL, and is aimed at greater understanding and utilization of an "electronic growth" concept. To date, the main findings of the "electronic growth" model are that a competition between quantum confinement, charge spilling, and interface-induced electron density os-cillations can make a flat ultrathin metal film critically, magically, marginally stable, or totally unstable against morphological roughening. For Ag on GaAs and other III-V semiconductor substrates, the electronic growth mechanism leads to the existence of a critical thickness for the formation of an atomically flat film. Theoretical studies also showed the existence of magic thicknesses for other metal/semiconductor systems, and the possibility of oscillatory metal-nonmetal transitions. The theo-retical and experimental scope of this project will include quantum effects in both the vertical and lat-eral directions and the interplay between thermodynamic and kinetic factors. The goal is to gain a deeper understanding of the pathways of the electronic mechanism for film growth, and to achieve controlled formation of lower-dimensional structures. The possibility of using electronic energetics as-sociated with quantum states and charge quantization to influence geometric ordering and size selec-tion of quantum dot arrays will also be explored. Theoretical predictions of critical/magic thicknesses and oscillatory metal-nonmetal transitions in a variety of systems will be studied experimentally.%%% The project addresses basic research issues in a topical area of materials science with high technologi-cal relevance. The basic knowledge and understanding gained from the research is expected to contrib-ute to next generation electronic/photonic materials. An important feature of the program is the inte-gration of research and education through the training of students in a fundamentally and technologi-cally significant area. The project is co-supported by the DMR/EM and DMR/MET programs.

该项目研究量子限制对金属/半导体薄膜和纳米结构外延生长的影响。该方法是德克萨斯州/奥斯汀分校和橡树岭国家实验室研究人员之间的理论/实验相结合的合作活动，旨在更好地理解和利用“电子生长”概念。迄今为止，“电子生长”模型的主要发现是，量子限制、电荷溢出和界面引起的电子密度振荡之间的竞争可以使平坦的超薄金属薄膜临界、神奇、边缘稳定或完全不稳​​定。对抗形态粗糙化。对于 GaAs 和其他 III-V 半导体衬底上的 Ag，电子生长机制导致存在形成原子级平坦薄膜的临界厚度。理论研究还表明其他金属/半导体系统存在神奇厚度，以及振荡金属-非金属转变的可能性。 该项目的理论和实验范围将包括垂直和横向的量子效应以及热力学和动力学因素之间的相互作用。目标是更深入地了解薄膜生长的电子机制路径，并实现低维结构的受控形成。还将探索利用与量子态和电荷量子化相关的电子能量学来影响量子点阵列的几何排序和尺寸选择的可能性。将通过实验研究各种系统中临界/神奇厚度和振荡金属-非金属转变的理论预测。%%% 该项目解决具有高技术相关性的材料科学主题领域的基础研究问题。从研究中获得的基础知识和理解预计将为下一代电子/光子材料做出贡献。 该计划的一个重要特点是通过在具有基础和技术意义的领域对学生进行培训，将研究和教育融为一体。该项目得到 DMR/EM 和 DMR/MET 计划的共同支持。