Magnetic and Calorimetric Studies on the New Class of Layered III-IV Diluted Magnetic Semiconductors

新型层状 III-IV 稀磁半导体的磁性和量热研究

• 批准号: 9972196
• 负责人: Thomas Pekarek
• 金额: $ 11.99万
• 依托单位: University of North Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-01 至 2003-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9972196&HistoricalAwards=false
• 关键词: Magnetic; Calorimetric; Studies; New; Class

9972196PekarekThis project deals with the magnetic and calorimetric properties of the new class of layered III-VI Diluted Magnetic Semiconductors (DMS). The III-VI semiconductors are known for their remarkable nonlinear optical properties. Preliminary magnetic measurements on GaMnSe and GaMnS crystals have revealed behavior strikingly different from that observed previously in the heavily studied II-VI and III-V DMS materials. Two key features that make the III-VI DMS unique is their two-dimensional layered structure (held together by van der Waals bonding between layers) and the potential for direct bonding of neighboring transition metal ions. The goal of this research program is to provide key information for unraveling some of the observed novel magnetic effects and to initiate an investigation of other transition metal ions in the III-VI semiconductor hosts. The research involves undergraduate students as well as a local high school teacher and will impact both the quality of technically trained undergraduates and the motivation of students at the high school level to enter scientific or technical fields. %%%This project deals with a new class of materials with potential photoelectronic applications. Undergraduate students and a local high school teacher will help make measurements using the state-of-the-art facilities at the National High Magnetic Field Laboratory in Tallahassee, Florida. They will learn a number of important experimental techniques while investigating a new and potentially important class of magnetic semiconductors.***

9972196Pekarek 该项目研究新型层状 III-VI 稀磁半导体 (DMS) 的磁性和量热特性。 III-VI 族半导体以其卓越的非线性光学特性而闻名。对 GaMnSe 和 GaMnS 晶体的初步磁性测量表明，其行为与之前在深入研究的 II-VI 和 III-V DMS 材料中观察到的行为截然不同。 III-VI DMS 独特的两个关键特征是其二维层状结构（通过层之间的范德华键结合在一起）以及相邻过渡金属离子直接键合的潜力。 该研究计划的目标是提供关键信息，以揭示一些观察到的新型磁效应，并启动对 III-VI 族半导体主体中其他过渡金属离子的研究。 该研究涉及本科生和当地高中教师，将影响受过技术培训的本科生的质量以及高中学生进入科学或技术领域的动机。 %%%该项目涉及具有潜在光电应用的新型材料。 本科生和当地高中教师将使用佛罗里达州塔拉哈西国家高磁场实验室最先进的设施帮助进行测量。他们将在研究一类具有潜在重要意义的新型磁性半导体的同时，学习许多重要的实验技术。***