Development of Novel Instrumentation for the Growth of Low Dimensional Structures Using Molecular Beam Epitaxy

利用分子束外延生长低维结构的新型仪器的开发

• 批准号: 9871210
• 负责人: Carmen Menoni
• 金额: $ 24.33万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-01 至 2002-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9871210&HistoricalAwards=false
• 关键词: Development; Novel; Instrumentation; Growth; Low

9871210 Menoni The ability to tailor the optical and electronic properties of low dimensional semiconductor structures with increased quantum confinement makes these structures attractive candidates for the design of optoelectronic devices. Fabrication of nanostructures that constrain the carriers to move in either one direction or within atomic clusters, as in quantum wires and quantum dots respectively, is a technological challenge. The PIs propose to develop novel instrumentation for the growth of low dimensional structures that incorporates optical manipulation of atomic species during the molecular beam epitaxy growth of III-V heterostructures. Laser beams will be introduced noninvasively into the MBE chamber. The radiation force generated by counter-propagating laser beams will be used to focus the Group III specie into an array of lines or dots to form periodic quantum wire or quantum dot structures with sub- 100nm feature size. This will create a composition modulation in the growth plane consisting of regions that are rich in the III-specie separated by regions that have been depleted of the III-specie. Such composition modulation will confine the carriers in either one or two directions in the plane of growth, depending on whether one or two mutually perpendicular standing waves of light are used to focus the atomic beam. Carrier confinement in the growth direction will be accomplished by sandwiching the composition-modulated layer with confinement layers of appropriate composition. The instrument will add a radically new capability to conventional MBE growth process without significantly altering the growth conditions. The proposed instrumentation will allow for the demonstration of a growth method that will provide unprecedented control in the location and size of the nanostructures ***

9871210 MENONI能够量身定制低维半导体结构的光学和电子性能，并增加了量子限制的能力，使这些结构有吸引力的候选者，以设计光电设备的设计。 像量子线和量子点一样，制造纳米结构的纳米结构限制了载体在一个方向或原子簇内部移动，这是一项技术挑战。 PI提议为低维结构的生长开发新的仪器，这些仪器在III-V异质结构的分子束外延生长期间结合了原子种类的光学操纵。 激光束将非侵入性地引入MBE腔室。 通过反向传输激光束产生的辐射力将用于将第三组的焦点聚焦到一系列线或点中，以形成具有低100nm特征大小的周期性量子线或量子点结构。 这将在生长平面中创建一个组成调制，该生长平面由富含III种的区域组成，该区域被III所含量耗尽的区域分离。 这种组成调制将在生长平面的一个或两个方向上限制载体，具体取决于是否使用一个或两个相互垂直的光波来聚焦原子束。 在生长方向上的载体限制将通过将成分调节层与适当组成的限制层夹在一起来实现。 该仪器将在传统的MBE增长过程中增加一个新的新能力，而不会显着改变生长条件。 拟议的仪器将允许演示一种生长方法，该方法将在纳米结构的位置和大小上提供前所未有的控制***