Development of Novel Instrumentation for the Growth of Low Dimensional Structures Using Molecular Beam Epitaxy

利用分子束外延生长低维结构的新型仪器的开发

• 批准号: 9871210
• 负责人: Carmen Menoni
• 金额: $ 24.33万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-01 至 2002-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9871210&HistoricalAwards=false
• 关键词: Development; Novel; Instrumentation; Growth; Low

9871210 Menoni The ability to tailor the optical and electronic properties of low dimensional semiconductor structures with increased quantum confinement makes these structures attractive candidates for the design of optoelectronic devices. Fabrication of nanostructures that constrain the carriers to move in either one direction or within atomic clusters, as in quantum wires and quantum dots respectively, is a technological challenge. The PIs propose to develop novel instrumentation for the growth of low dimensional structures that incorporates optical manipulation of atomic species during the molecular beam epitaxy growth of III-V heterostructures. Laser beams will be introduced noninvasively into the MBE chamber. The radiation force generated by counter-propagating laser beams will be used to focus the Group III specie into an array of lines or dots to form periodic quantum wire or quantum dot structures with sub- 100nm feature size. This will create a composition modulation in the growth plane consisting of regions that are rich in the III-specie separated by regions that have been depleted of the III-specie. Such composition modulation will confine the carriers in either one or two directions in the plane of growth, depending on whether one or two mutually perpendicular standing waves of light are used to focus the atomic beam. Carrier confinement in the growth direction will be accomplished by sandwiching the composition-modulated layer with confinement layers of appropriate composition. The instrument will add a radically new capability to conventional MBE growth process without significantly altering the growth conditions. The proposed instrumentation will allow for the demonstration of a growth method that will provide unprecedented control in the location and size of the nanostructures ***

9871210 Menoni 通过增加量子限制来定制低维半导体结构的光学和电子特性的能力使这些结构成为光电器件设计的有吸引力的候选者。 制造限制载流子沿一个方向或在原子簇内移动的纳米结构（如分别在量子线和量子点中）是一项技术挑战。 PI 提议开发用于低维结构生长的新型仪器，该仪器在 III-V 异质结构的分子束外延生长过程中结合了原子种类的光学操纵。 激光束将以非侵入方式引入 MBE 室。 反向传播激光束产生的辐射力将用于将 III 族物质聚焦成线或点阵列，以形成具有亚 100nm 特征尺寸的周期性量子线或量子点结构。 这将在生长平面中产生成分调节，该生长平面由富含 III 物质的区域组成，该区域与已耗尽 III 物质的区域分开。 这种成分调制将载流子限制在生长平面中的一个或两个方向，具体取决于是否使用一个或两个相互垂直的光驻波来聚焦原子束。 生长方向上的载流子限制将通过将成分调制层与适当成分的限制层夹在中间来实现。 该仪器将为传统 MBE 生长过程添加全新功能，而无需显着改变生长条件。 拟议的仪器将允许演示一种生长方法，该方法将对纳米结构的位置和尺寸提供前所未有的控制***