SBIR Phase I: Growth of CdGeAs2 Single Crystals by the Czochralski Technique

SBIR 第一阶段：采用直拉技术生长 CdGeAs2 单晶

• 批准号: 9860740
• 负责人: Dan Perlov
• 金额: $ 9.98万
• 依托单位: INRAD, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9860740&HistoricalAwards=false
• 关键词: SBIR; Phase; Growth; CdGeAs2; Single

9860740 This Small Business Innovation Research (SBIR)Phase I project aims to develop a new approach for the growth of CdGeAs2 single crystals. CdGeAs2 has outstanding optical nonlinear properties. Its nonlinear optical coefficient is the highest among all known crystals, it is transmissive from 2-3 to 18 um and it has a relatively high thermal conductivity. It is therefore, a material of choice for the generation of tunable laser radiation in the infrared. Although the optical transmission of CdGeAs2 can be improved by after-growth treatments, we propose to grow CdGeAs2 single crystals by the Czochralski technique to achieve high uniformity and optical transmission in the as-grown state. High quality and lower cost CdGeAs2 single crystals will make possible powerful infrared laser sources tunable from 4 to 11 um. Such sources will have numerous commercial applications including defense countermeasure systems, communication systems, remote sensing of contaminants in the atmosphere and infrared spectroscopy.

9860740这项小型企业创新研究（SBIR）I期项目旨在为CDGEAS2单晶增长开发一种新方法。 CDGEAS2具有出色的光学非线性特性。它的非线性光学系数在所有已知晶体中都是最高的，它是2-3至18 um的传播，并且具有相对较高的导热率。因此，这是一种在红外线中产生可调激光辐射的首选材料。尽管CDGEAS2的光学传播可以通过后生长处理来改善，但我们建议通过Czochralski技术生长CDGEAS2单晶，以在生长状态下实现高均匀性和光学传播。 高质量和较低的CDGEAS2单晶将使强大的红外激光源可从4到11 UM调整。此类来源将拥有许多商业应用，包括国防对策系统，通信系统，大气中污染物的遥感和红外光谱。