Research on Blue and Near Ultraviolet Diode Lasers

蓝光及近紫外二极管激光器的研究

• 批准号: 9726938
• 负责人: Arto Nurmikko
• 金额: $ 15万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-01 至 2000-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9726938&HistoricalAwards=false
• 关键词: Research; Blue; Near; Ultraviolet; Diode

9726938 Nurmikko The PI proposes a research program whose objective is to focus on specific areas of basic and applied semiconductor science to aid in the the continued development of the group III-nitride based semiconductor blue lasers and extension of such devices to the near ultraviolet. Further progress in this field of vast technological potential requires systematic scientific efforts. The PI identifies and addresses two critical areas in the proposed program: (a) the study of optical gain and related radiative processes in the nitride quantum wells for optimizing the active region of the laser and implementing a low threshold device design, and (b) development of understanding at a microscopic level of the p-type ohmic contact problem. In addition to the overall idiosyncracies of a widegap semiconductor, both of these problem areas are impacted by the complex and rich microstructure of the nitride heterostructures. In the planned work we thus also look for key links between the crystal microstructure and optoelectronic properties which are presently poorly understood. Apart from our early results on nitride-based diode light emitters, the PI takes advantage of our experience with bluegreen II-VI semiconductor lasers where the issues of gain, device design, and contacts were successfully pursued by the PIs for advancing these quantum well diode devices. Significant differences and distinct challenges do, of course, exist in the nitrides; however, given the common features that are shared by wide bandgap semiconductors at a fundamental level provides a very useful base of comparison for quantitatively and scientifically meaningful comparisons, The proposed research takes advantage of special capabilities and techniques adapted to the study of both nitride-based heterostructures and diode laser devices. For example, advanced laser-based spectroscopic techniques, including ultrafast real-time spectroscopy will be applied to study the optical gain and dynamics of a high density lo w dimensional electron-hole pair in a disordered system such as the InGaN QW where electronic localization effects are important. The techniques include high spatial resolution probes such as near-field optical microscopy. For the p-type contact studies, in-situ deposition of metallization and InN heterostructures in UHV environment is proposed as a means to study the microscopic properties of the metal-nitride interface in order to optimize a low resistance contact for diode laser application. ***

9726938 Nurmikko PI提出了一项研究计划，其目的是关注基本和应用半导体科学的特定领域，以帮助基于III-Nenride组的持续开发基于III-Nenride的半导体蓝色激光，并将此类设备扩展到近乎紫外线。 在这一巨大的技术潜力领域的进一步发展需要系统的科学努力。 PI识别并解决了拟议程序中的两个关键领域：（a）氮化物量子井中的光增益和相关辐射过程的研究，以优化激光的活动区域并实施低阈值设备设计，以及（b）在p型欧姆接触问题的微观水平上了解理解。 除了广宽半导体的整体特质外，这两个问题领域都受到氮化物异质结构的复杂微观结构的影响。 因此，在计划的工作中，我们还寻找晶体微观结构和光电特性之间的关键联系，目前知之甚少。 除了我们对基于氮化二极管的二极管光发射器的早期结果外，PI还利用了我们在Bluegreen II-VI半导体激光器上的经验，在这些激光器中，PIS成功地追求了增益，设备设计和触点的问题，以推进这些量子井二极管二极管。设备。 当然，氮化物存在重大差异和不同的挑战。但是，鉴于宽带的宽带半导体在基本层面上共享的共同特征为定量和科学意义上的比较提供了非常有用的比较基础，因此拟议的研究利用了适用于两种基于硝酸盐的研究的特殊能力和技术异质结构和二极管激光器设备。 例如，将应用基于高级激光的光谱技术，包括超快实时光谱法，以研究无序系统中高密度的lo w dimensional电子孔对的光学增益和动力学，例如Ingan QW，其中电子定位效应很重要。 这些技术包括高空间分辨率探针，例如近场光学显微镜。 对于P型接触研究，提出了金属化和INN异质结构在UHV环境中的原位沉积，以研究金属氮化物界面的显微镜特性，以优化用于二极管激光应用的低电阻接触。 ***