U.S.-Germany Cooperative Research: Microstructure and Alloying Effects on the Reliability of Conductor Lines

美德合作研究：微观结构和合金化对导线可靠性的影响

• 批准号: 9513887
• 负责人: William Nix
• 金额: $ 1.4万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-04-01 至 2000-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9513887&HistoricalAwards=false
• 关键词: U.S.; Germany; Cooperative; Research; Microstructure

This award supports Professors William Nix and John Bravman, plus two graduate students, all from Stanford University, to collaborate in studies of failures in electronic materials with Professor Eduard Arzt and his research group of the Institute for Metallurgy of the University of Stuttgart, Germany. Professor Arzt and his students have pioneered the study of `interface controlled` deformation processes, and they have developed a new technique for studying electromigration failure. The U.S. group led by Professor Nix has developed models to describe the flow and accumulation of ions in conductor lines and the initial stages of void formation. They also have specialized equipment for studying the formation and propagation of voids in metal lines. Advances in miniaturization of integrated circuits have exposed the metallic conductor lines to increasingly severe operating conditions. The aim of this research collaboration is to develop a better understanding of the microstructural and alloying effects that control the reliability of conductor lines in integrated circuits. These lines typically carry very high current densities which causes atoms to migrate from one place to another creating damage sites. This leads to the formation of voids and cracks in the surrounding materials, which is the cause of major reliability problems for miniaturized electronic devices. Joining the complementary expertise of these U.S. and German research groups will accelerate progress in understanding such critical electromigration phenomena in conductor lines.

该奖项支持威廉·尼克斯（William Nix）和约翰·布拉夫曼（John Bravman）教授，以及两名来自斯坦福大学的研究生，与德国斯图特加特大学冶金学研究所的研究小组合作，与Eduard Arzt教授及其研究小组合作。 Arzt教授和他的学生开创了“接口控制”变形过程的研究，他们开发了一种用于研究电气失败的新技术。 由Nix教授领导的美国组开发了模型，以描述导体线中离子的流量和积累以及空隙形成的初始阶段。 他们还具有专门的设备，用于研究金属线中空隙的形成和传播。 集成电路的微型化的进步使金属导体线暴露于越来越严重的工作条件。 这项研究合作的目的是更好地了解控制集成电路中导体线的可靠性的微观结构和合金效应。 这些线通常具有很高的电流密度，这会导致原子从一个地方迁移到另一个地方，从而产生损害位点。 这导致了周围材料中空隙和裂纹的形成，这是小型电子设备的主要可靠性问题的原因。 加入这些美国和德国研究小组的互补专业知识将加速进步，以理解导体线中的这种关键电气移民现象。