Research Initation Award: Improved Modeling of Ultra-fast Semiconductor Devices Using the Hydro-kinet Transport Theory

研究启动奖：利用流体运动输运理论改进超快半导体器件的建模

• 批准号: 9409471
• 负责人: Ming-Cheng Cheng
• 金额: $ 11万
• 依托单位: University of New Orleans
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-07-01 至 1997-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9409471&HistoricalAwards=false
• 关键词: Research; Initation; Award; Improved; Modeling

9409471 Cheng The objectives of this project are to improve existing hydrodynamic transport models, to develop efficient approaches to nonequilibrium/hot-electron energy/momentum distribution functions in single-and multi-valley bandstructures, to study the fundamental transport phenomena and limitations of device operation at small scales, to explore new device structures, and to improve device performance. The approach is based on the concept of a "hydro-kinetic" distribution which is interpolated between the Boltzmann (kinetic) transport equation and hydro-dynamic equations. The developed models can properly account for effects, which have never been successfully included in modeling high-speed semiconductor devices. In addition, the efficient hydro-kinetic approach is useful of analysis of FET gate current, electron injection between heterojunctions, and device reliability, associated with hot-electron phenomena. Success of this proposed project will result in a new understanding of these effects and will bring in new concepts and structures to improve device performance and reliability. ***

9409471 程 该项目的目标是改进现有的流体动力输运模型，开发单谷和多谷能带结构中非平衡/热电子能量/动量分布函数的有效方法，研究基本输运现象和装置运行的局限性在小尺度上，探索新的器件结构，并提高器件性能。 该方法基于“流体动力学”分布的概念，该分布插值在玻尔兹曼（动力学）输运方程和流体动力学方程之间。 开发的模型可以正确地解释从未成功包含在高速半导体器件建模中的效应。 此外，高效的流体动力学方法可用于分析 FET 栅极电流、异质结之间的电子注入以及与热电子现象相关的器件可靠性。 该项目的成功将使人们对这些效应有新的认识，并将引入新的概念和结构来提高器件的性能和可靠性。 ***