Conventional and Coherent Quantum 1/f Effects in Solid State Electronic Devices and Microstructures

固态电子器件和微结构中的传统和相干量子 1/f 效应

基本信息

批准号：
9207844
负责人：
Peter Handel
金额：
$ 21.03万
依托单位：
University of Missouri-Saint Louis
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
1992
资助国家：
美国
起止时间：
1992-08-01 至 1997-01-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9207844&HistoricalAwards=false
关键词：
Conventional Coherent Quantum Effects Solid

项目摘要

1/f noise appears in most high-technology applications as a low-frequency fluctuation limiting the achievable performance and stability. On the other hand, physical cross sections and process rates have been shown theoretically by the author to fluctuate with a 1/f spectral density according to a universal formula which gives the power spectrum of fractional cross section fluctuations in terms of the fine structure constant a=1/137 if both the velocity change of the scattered current carriers and their number are known. We can now calculate quantum 1/f noise in all forms of scattering (impurity, phonon, umklapp, inter-valley), in bulk and surface recombination and tunneling rates, as well as emission processes. For extended currents in larger devices with over 1013 carriers per unit length the magnetic energy dominates the kinetic energy of drift motion, so the coherent quantum 1/f effect becomes dominant. The proposed research would apply this theory to solid state devices and microstructures, and would further develop the theory in the transition region between the conventional and coherent domains. We expect the proposed research to benefit high-tech applications through general and practical low 1/f noise design and optimization principles, and to improve the general understanding of the quantum 1/f effect as quantum chaos, or as a technically important fundamental law of nature.

1/f 噪声作为低频波动出现在大多数高科技应用中，限制了可实现的性能和稳定性。另一方面，作者从理论上表明，物理横截面和加工速率根据通用公式以 1/f 谱密度波动，该公式给出了以精细结构常数 a 表示的分数横截面波动的功率谱。如果散射载流子的速度变化及其数量已知，则=1/137。我们现在可以计算所有形式的散射（杂质、声子、umklapp、谷间）、体和表面复合、隧道速率以及发射过程中的量子 1/f 噪声。对于每单位长度超过 1013 个载流子的较大器件中的扩展电流，磁能主导漂移运动的动能，因此相干量子 1/f 效应变得占主导地位。拟议的研究将该理论应用于固态器件和微结构，并将进一步发展传统域和相干域之间过渡区域的理论。我们期望所提出的研究通过通用且实用的低 1/f 噪声设计和优化原理使高科技应用受益，并提高对量子 1/f 效应作为量子混沌或作为技术上重要的基本定律的一般理解。自然。