Two types of nanoscale nonlinear memristor models and theirseries-parallel circuits

Two types of nanoscale nonlinear memristor models and theirseries-parallel circuits

The memristor is a novel kind of electronic device with dynamic variable resistance that is dependent on the past history of the input current or voltage. As the fourth fundamental circuit element, the memristor captures a number of unique properties that have been found to possess attractive potentials in some promising fields such as nonvolatile memory, nonlinear circuit and system, and neuromorphic system. Additionally, compared with a circuit of single memristor, series-parallel circuit of memristors possesses more abundant device characteristics which arouses increasingly extensive interest from numerous researchers. In this paper, the mathematical closed-form charge-governed and flux-governed HP memristor nonlinear models are presented with constructive procedures. In particular, these models are more realistic by taking into account the nonlinear dopant drift effect nearby the terminals and the boundary conditions, and by adding a simple and effective window function. Furthermore, based on the internal parameters and threshold of the memristor respectively, the theoretical derivation and numerical analysis of the memristor-based series-parallel connection circuits have been made comprehensively. For obtaining the characteristics of the memristor-based combinational circuits intuitively, a graphical user interface is designed based on Matlab software, which is beneficial to displaying the properties of the memristive system clearly. The results in the present paper may provide theoretical reference and reliable experimental basis for the further development of the memristor-based combinational circuits.

忆阻器是一种新型电子器件，其动态可变电阻取决于输入电流或电压的过往历史。作为第四种基本电路元件，忆阻器具有许多独特的性质，在非易失性存储器、非线性电路与系统以及神经形态系统等一些有前景的领域中被发现具有诱人的潜力。此外，与单个忆阻器电路相比，忆阻器的串并联电路具有更丰富的器件特性，这引起了众多研究人员越来越广泛的兴趣。本文通过构建过程给出了数学上封闭形式的电荷控制和磁通控制的惠普忆阻器非线性模型。特别是，这些模型通过考虑端子附近的非线性掺杂剂漂移效应和边界条件，并添加一个简单有效的窗函数而更加符合实际。此外，分别基于忆阻器的内部参数和阈值，对基于忆阻器的串并联电路进行了全面的理论推导和数值分析。为了直观地获得基于忆阻器的组合电路的特性，基于Matlab软件设计了一个图形用户界面，这有利于清晰地展示忆阻系统的特性。本文的研究结果可为基于忆阻器的组合电路的进一步发展提供理论参考和可靠的实验依据。