Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

我们报道了首台在912 nm直接由二极管泵浦的、基于半导体可饱和吸收镜锁模的Nd:GdVO₄激光器。该激光器在1063 nm处产生了10.14 W的平均输出功率，在85.2 MHz的重复频率下脉冲宽度为16 ps。在锁模状态下，相对于吸收的泵浦功率，光 - 光转换效率和斜率效率分别计算为49.6%和67.4%。由于低量子亏损泵浦，输出功率仅受可用泵浦功率的限制。