Two-Inch Wafer-Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF-Sputtering

Two-Inch Wafer-Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF-Sputtering

A film stripping method that allows for liquid phase exfoliation assisted by spin coating polymethyl methacrylate has been investigated, resulting in a two-inch hexagonal boron nitride (hBN) film to be fully stripped and then transferred. A number of key factors that can influence the stripping and the transferring process of the films grown by sputtering have been systematically analyzed, including different solutions, different concentration of solution and different thickness of films. The morphology and properties of the hBN films before and after stripping have been characterized. The band edge absorption peak of the transferred film is 229 nm and the corresponding optical band gap is 5.50 eV. Such transferred hBN films have been fabricated into transparent resistive switching devices on indium-tin-oxide glass, demonstrating a constant resistance window of approximate to 10(2) even under different applied voltages. This work systematically studies the stripping process, characterizes the transferred films, and explores the application in the field of resistance switching, which lay a foundation for the further application of hBN materials in optoelectronic devices.

已经研究了一种允许由自旋涂层聚甲基丙烯酸甲酯辅助的液相去角质的薄膜剥离方法，从而导致两英寸的六边形硝酸硼（HBN）膜完全剥离并转移。已系统地分析了许多关键因素，这些因素可能影响通过溅射而生长的膜的转移过程，包括不同的溶液，不同的溶液浓度和不同的膜厚度。剥离之前和之后的H​​BN膜的形态和特性已被表征。传递膜的带边缘吸收峰为229 nm，相应的光条间隙为5.50 eV。这种转移的HBN膜已被制造成二键蛋白氧化物玻璃上透明的电阻开关设备，即使在不同的施加电压下，也显示出恒定的电阻窗口，即使在10（2）中。这项工作系统地研究了剥离过程，表征了转移的膜，并探讨了电阻切换领域的应用，这为在光电设备中进一步应用HBN材料奠定了基础。